High-Efficiency MOSFET Transformerless Inverter for Non-isolated Microinverter Applications


State-of-the-art low-power-level metal–oxide–semiconductor field-effect transistor (MOSFET)-based transformerless photovoltaic (PV) inverters can achieve high efficiency by using latest super junction MOSFETs. However, these MOSFET-based inverter topologies suffer from one or more of these drawbacks: MOSFET failure risk from body diode reverse recovery, increased conduction losses due to more devices, or low magnetics utilization. By splitting the conventional MOSFET based phase leg with an optimized inductor, this paper proposes a novel MOSFET-based phase leg configuration to minimize these drawbacks. Based on the proposed phase leg configuration, a high efficiency single-phase MOSFET transformerless inverter is presented for the PV microinverter applications. The pulsewidth modulation (PWM) modulation and circuit operation principle are then described. The common-mode and differential-mode voltage model is then presented and analyzed for circuit design. Experimental results of a 250Whardware prototype are shown to demonstrate the merits of the proposed transformerless inverter on non-isolated two-stage PV microinverter application.

 KEYWORDS: Microinverter, MOSFET inverters, photovoltaic (PV) inverter, transformerless inverter.




Fig. 1. Two-stage nonisolated PV microinverter.



Fig. 2. Proposed transformerless inverter topology with (a) separated magnetic and (b) integrated magnetics.



Fig. 3. Output voltage and current waveforms.


Fig. 4. PWM gate signals waveforms.


Fig. 5. Inverter splitting inductor current waveform.


Fig. 6. Waveforms of voltage between grid ground and DC ground (VEG ).


This paper proposes a MOSFET transformerless inverter with a novel MOSFET-based phase leg, which achieves:

1) high efficiency by using super junction MOSFETs and SiC diodes;

2) minimized risks from the MOSFET phase leg by splitting the MOSFET phase leg with optimized inductor and minimizing the di/dt from MOSFET body diode reverse recovery;

3) high magnetics utilization compared with previous high efficiency MOSFET transformerless inverters in [21], [22], [25], which only have 50% magnetics utilization.

The proposed transformerless inverter has no dead-time requirement, simple PWM modulation for implementation, and minimized high-frequency CMissue. A 250Whardware prototype has been designed, fabricated, and tested in two-stage nonisolated microinverter application. Experimental results demonstrate that the proposed MOSFET transformerless inverter achieves 99.01% peak efficiency at full load condition and 98.8% CEC efficiency and also achieves around 98% magnetic utilization. Due to the advantages of high efficiency, low CM voltage, and improved magnetic utilization, the proposed topology is attractive for two-stage nonisolated PV microinverter applications and transformerless string inverter applications.


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